Fluorescence EXAFS analysis of ErP grown on InP by organometallic vapor phase epitaxy using a new organometal Er(EtCp)3: Fid-Bau Portal

Fluorescence EXAFS analysis of ErP grown on InP by organometallic vapor phase epitaxy using a new organometal Er(EtCp)3

Ofuchi, H. / Akane, T. / Jinno, S. / Kuno, T. / Hirata, T. / Tabuchi, M. / Fujiwara, Y. / Takeda, Y. / Nakamura, A.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Fluorescence EXAFS analysis of ErP grown on InP by organometallic vapor phase epitaxy using a new organometal Er(EtCp)3

Ofuchi, H. / Akane, T. / Jinno, S. / Kuno, T. / Hirata, T. / Tabuchi, M. / Fujiwara, Y. / Takeda, Y. / Nakamura, A.

Fluorescence EXAFS analysis of ErP grown on InP by organometallic vapor phase epitaxy using a new organometal Er(EtCp)3

Ofuchi, H. / Akane, T. / Jinno, S. / Kuno, T. / Hirata, T. / Tabuchi, M. / Fujiwara, Y. / Takeda, Y. / Nakamura, A.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Document information

Title:

Fluorescence EXAFS analysis of ErP grown on InP by organometallic vapor phase epitaxy using a new organometal Er(EtCp)3

Contributors:

Ofuchi, H. (author) / Akane, T. (author) / Jinno, S. (author) / Kuno, T. (author) / Hirata, T. (author) / Tabuchi, M. (author) / Fujiwara, Y. (author) / Takeda, Y. (author) / Nakamura, A. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 6 ; 469-472

Publication date:

2003-01-01

Size:

4 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

Breiland, W. G. / Coltrin, M. E. / Creighton, J. R. et al. | British Library Online Contents | 1999

Fundamental aspects of organometallic vapor phase epitaxy

Stringfellow, G. B. | British Library Online Contents | 2001

Luminescence properties of Er,O-codoped GaP grown by organometallic vapor phase epitaxy

Fujiwara, Y. / Koide, T. / Takeda, Y. | British Library Online Contents | 2001

Nanometer-scale InAs islands grown on GaP (001) by organometallic vapor phase epitaxy

Nonogaki, Y. / Iguchi, T. / Fuchi, S. et al. | British Library Online Contents | 1998

Photoluminescence characterization of GaN thin film grown by atmospheric pressure organometallic vapor phase epitaxy

Liao, S. M. / Wen, J. H. / Chou, W. C. et al. | British Library Online Contents | 1997