Deep levels in GaInAs grown by molecular beam epitaxy and their concentration reduction with annealing treatment

Rangel-Kuoppa, V. T. / Dekker, J. | British Library Online Contents | 2006

Characteristics of deep levels in Al-doped ZnSe grown by molecular beam epitaxy

Oh, D. C. / Song, J. S. / Chang, J. H. et al. | British Library Online Contents | 2003

Characteristics of non-annealed l=1.35mm closely lattice-matched GaInNAs/GaAs p-i-n photodetector structures grown by solid-source molecular beam epitaxy

Loke, W. K. / Yoon, S. F. / Wicaksono, S. et al. | British Library Online Contents | 2006

Donor acceptor pair in molecular beam epitaxy grown GaN

Ren, G. B. / Dewsnip, D. J. / Lacklison, D. E. et al. | British Library Online Contents | 1997

Deep level transient spectroscopy investigation of GaAs grown by atomic layer molecular beam epitaxy

Bosacchi, A. / Gombia, E. / Madella, M. et al. | British Library Online Contents | 1994