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Characteristics of ZrO~2/Al~2O~3 Bilayer Film for Gate Dielectric Applications Deposited by Atomic Layer Deposition Method
Characteristics of ZrO~2/Al~2O~3 Bilayer Film for Gate Dielectric Applications Deposited by Atomic Layer Deposition Method
Characteristics of ZrO~2/Al~2O~3 Bilayer Film for Gate Dielectric Applications Deposited by Atomic Layer Deposition Method
Kim, Y. D. (author) / Lee, J. H. (author) / Koo, J. H. (author) / Chang, H. J. (author) / Jeon, H. T. (author) / Kang, S.-G. / Kobayashi, T.
2004-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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