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    GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

    New search for: Wu, Y. Q.
    New search for: Ye, P. D.
    New search for: Wilk, G. D.
    New search for: Yang, B.

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    GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

    New search for: Wu, Y. Q.
    New search for: Ye, P. D.
    New search for: Wilk, G. D.
    New search for: Yang, B.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

    New search for: Wu, Y. Q.
    New search for: Ye, P. D.
    New search for: Wilk, G. D.
    New search for: Yang, B.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

    Contributors:

    Wu, Y. Q. (author) / Ye, P. D. (author) / Wilk, G. D. (author) / Yang, B. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 135 ; 282-284

    Publication date:

    2006-01-01

    Size:

    3 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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