Hafnium oxide gate dielectrics grown from an alkoxide precursor: structure and defects: Fid-Bau Portal

Hafnium oxide gate dielectrics grown from an alkoxide precursor: structure and defects

Frank, M. M. / Sayan, S. / Dormann, S. / Emge, T. J. / Wielunski, L. S. / Garfunkel, E. / Chabal, Y. J.

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Hafnium oxide gate dielectrics grown from an alkoxide precursor: structure and defects

Frank, M. M. / Sayan, S. / Dormann, S. / Emge, T. J. / Wielunski, L. S. / Garfunkel, E. / Chabal, Y. J.

Hafnium oxide gate dielectrics grown from an alkoxide precursor: structure and defects

Frank, M. M. / Sayan, S. / Dormann, S. / Emge, T. J. / Wielunski, L. S. / Garfunkel, E. / Chabal, Y. J.

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Title:

Hafnium oxide gate dielectrics grown from an alkoxide precursor: structure and defects

Contributors:

Frank, M. M. (author) / Sayan, S. (author) / Dormann, S. (author) / Emge, T. J. (author) / Wielunski, L. S. (author) / Garfunkel, E. (author) / Chabal, Y. J. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 109 ; 6-10

Publication date:

2004-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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