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Characterization of HfOxNy gate dielectrics using a hafnium oxide as target

Liu, M. / Fang, Q. / He, G. / Zhu, L. Q. / Zhang, L. D.

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Characterization of HfOxNy gate dielectrics using a hafnium oxide as target

Liu, M. / Fang, Q. / He, G. / Zhu, L. Q. / Zhang, L. D.

Characterization of HfOxNy gate dielectrics using a hafnium oxide as target

Liu, M. / Fang, Q. / He, G. / Zhu, L. Q. / Zhang, L. D.

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Check availability in my library

Order at Subito €

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Document information

Title:

Characterization of HfOxNy gate dielectrics using a hafnium oxide as target

Contributors:

Liu, M. (author) / Fang, Q. (author) / He, G. (author) / Zhu, L. Q. (author) / Zhang, L. D. (author)

Published in:

APPLIED SURFACE SCIENCE ; 252 ; 8673-8676

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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