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    Deposition temperature dependent optical and electrical properties of ALD HfO2 gate dielectrics pretreated with tetrakisethylmethylamino hafnium

    New search for: Gao, J.
    New search for: He, G.
    New search for: Zhang, J.W.
    New search for: Liu, Y.M.
    New search for: Sun, Z.Q.

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    Deposition temperature dependent optical and electrical properties of ALD HfO2 gate dielectrics pretreated with tetrakisethylmethylamino hafnium

    New search for: Gao, J.
    New search for: He, G.
    New search for: Zhang, J.W.
    New search for: Liu, Y.M.
    New search for: Sun, Z.Q.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Deposition temperature dependent optical and electrical properties of ALD HfO2 gate dielectrics pretreated with tetrakisethylmethylamino hafnium

    New search for: Gao, J.
    New search for: He, G.
    New search for: Zhang, J.W.
    New search for: Liu, Y.M.
    New search for: Sun, Z.Q.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Deposition temperature dependent optical and electrical properties of ALD HfO2 gate dielectrics pretreated with tetrakisethylmethylamino hafnium

    Contributors:

    Gao, J. (author) / He, G. (author) / Zhang, J.W. (author) / Liu, Y.M. (author) / Sun, Z.Q. (author)

    Published in:

    Materials research bulletin ; 70 ; 840-846

    Publication date:

    2015-01-01

    Size:

    7 pages

    ISSN:

    0025-5408

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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