Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination: Fid-Bau Portal

Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination

Sankin, I. / Dufrene, J. B. / Merrett, J. N. / Casady, J. B.

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Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination

Sankin, I. / Dufrene, J. B. / Merrett, J. N. / Casady, J. B.

Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination

Sankin, I. / Dufrene, J. B. / Merrett, J. N. / Casady, J. B.

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Check availability in my library

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Document information

Title:

Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination

Contributors:

Sankin, I. (author) / Dufrene, J. B. (author) / Merrett, J. N. (author) / Casady, J. B. (author) / Bergman, P. / Janzen, E.

Published in:

Silicon Carbide and Related Materials 2002 ; 879-882

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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