Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate

Tanaka, Y. / Ohno, T. / Oyanagi, N. et al. | British Library Online Contents | 2004

Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes

Vang, H. / Scharnholz, S. / Raynaud, C. et al. | British Library Online Contents | 2009

The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN Diodes

Hefner, A. / McNutt, T. / Berning, D. et al. | British Library Online Contents | 2004

Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height

Paques, G. / Scharnholz, S. / Konrath, J.P. et al. | British Library Online Contents | 2011

Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias

Speer, K. M. / Spry, D. J. / Trunek, A. J. et al. | British Library Online Contents | 2007