Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties: Fid-Bau Portal

Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties

Izumi, S. / Kamata, I. / Tawara, T. / Fujisawa, H. / Tsuchida, H.

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Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties

Izumi, S. / Kamata, I. / Tawara, T. / Fujisawa, H. / Tsuchida, H.

Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties

Izumi, S. / Kamata, I. / Tawara, T. / Fujisawa, H. / Tsuchida, H.

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Check availability in my library

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Document information

Title:

Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties

Contributors:

Izumi, S. (author) / Kamata, I. (author) / Tawara, T. (author) / Fujisawa, H. (author) / Tsuchida, H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 1085-1088

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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