Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates: Fid-Bau Portal

Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates

Gassoumi, M. / Sghaier, N. / Dermoul, I. / Chekir, F. / Maaref, H. / Bluet, J. M. / Guillot, G. / Morvan, E. / Noblanc, O. / Dua, C.

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Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates

Gassoumi, M. / Sghaier, N. / Dermoul, I. / Chekir, F. / Maaref, H. / Bluet, J. M. / Guillot, G. / Morvan, E. / Noblanc, O. / Dua, C.

Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates

Gassoumi, M. / Sghaier, N. / Dermoul, I. / Chekir, F. / Maaref, H. / Bluet, J. M. / Guillot, G. / Morvan, E. / Noblanc, O. / Dua, C.

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Title:

Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates

Contributors:

Gassoumi, M. (author) / Sghaier, N. (author) / Dermoul, I. (author) / Chekir, F. (author) / Maaref, H. (author) / Bluet, J. M. (author) / Guillot, G. (author) / Morvan, E. (author) / Noblanc, O. (author) / Dua, C. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 1185-1188

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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