A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates: Fid-Bau Portal

A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates

Eriksson, J. / Rorsman, N. / Zirath, H. / Henry, A. / Magnusson, B. / Ellison, A. / Janzen, E.

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A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates

Eriksson, J. / Rorsman, N. / Zirath, H. / Henry, A. / Magnusson, B. / Ellison, A. / Janzen, E.

A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates

Eriksson, J. / Rorsman, N. / Zirath, H. / Henry, A. / Magnusson, B. / Ellison, A. / Janzen, E.

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Title:

A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates

Contributors:

Eriksson, J. (author) / Rorsman, N. (author) / Zirath, H. (author) / Henry, A. (author) / Magnusson, B. (author) / Ellison, A. (author) / Janzen, E. (author) / Bergman, P. / Janzen, E.

Published in:

Silicon Carbide and Related Materials 2002 ; 737-740

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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