Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch: Fid-Bau Portal

Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch

Friedrichs, P. / Elpelt, R. / Schorner, R. / Mitlehner, H. / Stephani, D.

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Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch

Friedrichs, P. / Elpelt, R. / Schorner, R. / Mitlehner, H. / Stephani, D.

Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch

Friedrichs, P. / Elpelt, R. / Schorner, R. / Mitlehner, H. / Stephani, D.

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Access via TIB

Check availability in my library

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Document information

Title:

Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch

Contributors:

Friedrichs, P. (author) / Elpelt, R. (author) / Schorner, R. (author) / Mitlehner, H. (author) / Stephani, D. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 1201-1204

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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