Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors: Fid-Bau Portal

Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors

Meyer, D. J. / Bohna, N. A. / Lenahan, P. M. / Lelis, A.

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Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors

Meyer, D. J. / Bohna, N. A. / Lenahan, P. M. / Lelis, A.

Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors

Meyer, D. J. / Bohna, N. A. / Lenahan, P. M. / Lelis, A.

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Check availability in my library

Order at Subito €

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Document information

Title:

Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors

Contributors:

Meyer, D. J. (author) / Bohna, N. A. (author) / Lenahan, P. M. (author) / Lelis, A. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 477-480

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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