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Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors
Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors
Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors
Meyer, D. J. (author) / Bohna, N. A. (author) / Lenahan, P. M. (author) / Lelis, A. (author)
MATERIALS SCIENCE FORUM ; 457/460 ; 477-480
2004-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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