1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications: Fid-Bau Portal

1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications

Veliadis, V. / McNutt, T. / McCoy, M. / Hearne, H. / De Salvo, G. / Clarke, C. / Potyraj, P. / Scozzie, C.J.

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1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications

Veliadis, V. / McNutt, T. / McCoy, M. / Hearne, H. / De Salvo, G. / Clarke, C. / Potyraj, P. / Scozzie, C.J.

1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications

Veliadis, V. / McNutt, T. / McCoy, M. / Hearne, H. / De Salvo, G. / Clarke, C. / Potyraj, P. / Scozzie, C.J.

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Check availability in my library

Order at Subito €

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Document information

Title:

1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications

Contributors:

Veliadis, V. (author) / McNutt, T. (author) / McCoy, M. (author) / Hearne, H. (author) / De Salvo, G. (author) / Clarke, C. (author) / Potyraj, P. (author) / Scozzie, C.J. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 1047-1050

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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