Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs: Fid-Bau Portal

Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs

Wright, N. G. / Poolamai, N. / Vassilevski, K. V. / Horsfall, A. B. / Johnson, C. M.

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Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs

Wright, N. G. / Poolamai, N. / Vassilevski, K. V. / Horsfall, A. B. / Johnson, C. M.

Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs

Wright, N. G. / Poolamai, N. / Vassilevski, K. V. / Horsfall, A. B. / Johnson, C. M.

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Title:

Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs

Contributors:

Wright, N. G. (author) / Poolamai, N. (author) / Vassilevski, K. V. (author) / Horsfall, A. B. (author) / Johnson, C. M. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 1433-1436

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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