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Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs
Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs
Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs
Ariyoshi, K. (author) / Harada, S. (author) / Senzaki, J. (author) / Kojima, T. (author) / Kojima, K. (author) / Tanaka, Y. (author) / Shinohe, T. (author) / Okumura, H. / Harima, H. / Kimoto, T.
2014-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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