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Simulation Study of High-k Materials for SiC Trench MOSFETs
Simulation Study of High-k Materials for SiC Trench MOSFETs
Simulation Study of High-k Materials for SiC Trench MOSFETs
Tappin, P. (author) / Mahapatra, R. (author) / Wright, N. G. (author) / Bhatnagar, P. (author) / Horsfall, A. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.
2007-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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