A platform for research: civil engineering, architecture and urbanism
Electrical and Optical Characterization of Electron Irradiated X Rays Detectors Based on 4H-SiC Epitaxial Layers
Electrical and Optical Characterization of Electron Irradiated X Rays Detectors Based on 4H-SiC Epitaxial Layers
Electrical and Optical Characterization of Electron Irradiated X Rays Detectors Based on 4H-SiC Epitaxial Layers
Le Donne, A. (author) / Binetti, S. (author) / Acciarri, M. (author) / Castaldini, A. (author) / Nava, F. (author) / Cavallini, A. (author) / Pizzini, S. (author)
MATERIALS SCIENCE FORUM ; 457/460 ; 1503-1506
2004-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions
British Library Online Contents | 2003
|Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers
British Library Online Contents | 2004
|Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers
British Library Online Contents | 2005
|Epitaxial 6H-SiC Layers as Detectors of Nuclear Particles
British Library Online Contents | 2000
|Electrical characterization of InP epitaxial layers using mobility spectrum technique
British Library Online Contents | 1999
|