Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices: Fid-Bau Portal

Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices

Jenny, J. R. / Malta, D. P. / Calus, M. R. / Muller, S. G. / Powell, A. R. / Tsvetkov, V. F. / Hobgood, H. M. / Glass, R. C. / Carter, C. H.

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Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices

Jenny, J. R. / Malta, D. P. / Calus, M. R. / Muller, S. G. / Powell, A. R. / Tsvetkov, V. F. / Hobgood, H. M. / Glass, R. C. / Carter, C. H.

Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices

Jenny, J. R. / Malta, D. P. / Calus, M. R. / Muller, S. G. / Powell, A. R. / Tsvetkov, V. F. / Hobgood, H. M. / Glass, R. C. / Carter, C. H.

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Document information

Title:

Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices

Contributors:

Jenny, J. R. (author) / Malta, D. P. (author) / Calus, M. R. (author) / Muller, S. G. (author) / Powell, A. R. (author) / Tsvetkov, V. F. (author) / Hobgood, H. M. (author) / Glass, R. C. (author) / Carter, C. H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 35-40

Publication date:

2004-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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