Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers: Fid-Bau Portal

Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers

Nipoti, R. / Nath, A. / Tian, Y.L. / Tamarri, F. / Moscatelli, F. / De Nicola, P. / Rao, M.V.

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Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers

Nipoti, R. / Nath, A. / Tian, Y.L. / Tamarri, F. / Moscatelli, F. / De Nicola, P. / Rao, M.V.

Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers

Nipoti, R. / Nath, A. / Tian, Y.L. / Tamarri, F. / Moscatelli, F. / De Nicola, P. / Rao, M.V.

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Check availability in my library

Order at Subito €

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Document information

Title:

Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers

Contributors:

Nipoti, R. (author) / Nath, A. (author) / Tian, Y.L. (author) / Tamarri, F. (author) / Moscatelli, F. (author) / De Nicola, P. (author) / Rao, M.V. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 985-988

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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