Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method: Fid-Bau Portal

Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method

Chaussende, D. / Balloud, C. / Auvray, L. / Baillet, F. / Zielinski, M. / Juillaguet, S. / Mermoux, M. / Pernot, E. / Camassel, J. / Pons, M.

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Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method

Chaussende, D. / Balloud, C. / Auvray, L. / Baillet, F. / Zielinski, M. / Juillaguet, S. / Mermoux, M. / Pernot, E. / Camassel, J. / Pons, M.

Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method

Chaussende, D. / Balloud, C. / Auvray, L. / Baillet, F. / Zielinski, M. / Juillaguet, S. / Mermoux, M. / Pernot, E. / Camassel, J. / Pons, M.

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Title:

Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method

Contributors:

Chaussende, D. (author) / Balloud, C. (author) / Auvray, L. (author) / Baillet, F. (author) / Zielinski, M. (author) / Juillaguet, S. (author) / Mermoux, M. (author) / Pernot, E. (author) / Camassel, J. (author) / Pons, M. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 91-94

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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