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Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
Chaussende, D. (author) / Balloud, C. (author) / Auvray, L. (author) / Baillet, F. (author) / Zielinski, M. (author) / Juillaguet, S. (author) / Mermoux, M. (author) / Pernot, E. (author) / Camassel, J. (author) / Pons, M. (author)
MATERIALS SCIENCE FORUM ; 457/460 ; 91-94
2004-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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