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Growth of Device Quality 4H-SiC High Velocity Epitaxy

Yakimova, R. / Syvajarvi, M. / Ciechonski, R. R. / Wahab, Q.

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Growth of Device Quality 4H-SiC High Velocity Epitaxy

Yakimova, R. / Syvajarvi, M. / Ciechonski, R. R. / Wahab, Q.

Growth of Device Quality 4H-SiC High Velocity Epitaxy

Yakimova, R. / Syvajarvi, M. / Ciechonski, R. R. / Wahab, Q.

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Check availability in my library

Order at Subito €

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Document information

Title:

Growth of Device Quality 4H-SiC High Velocity Epitaxy

Contributors:

Yakimova, R. (author) / Syvajarvi, M. (author) / Ciechonski, R. R. (author) / Wahab, Q. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 201-204

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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