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Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method
Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method
Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method
Mitani, Y. (author) / Tomita, N. (author) / Hamano, K. (author) / Tarutani, M. (author) / Tanaka, T. (author) / Ohno, A. (author) / Kuroiwa, T. (author) / Toyoda, Y. (author) / Imaizumi, M. (author) / Sumitani, H. (author)
2014-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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