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    TEM of Dislocations in Forward-Biased 4H-SiC PiN Diodes

    New search for: Zhang, M.
    New search for: Lendenmann, H.
    New search for: Pirouz, P.

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    TEM of Dislocations in Forward-Biased 4H-SiC PiN Diodes

    New search for: Zhang, M.
    New search for: Lendenmann, H.
    New search for: Pirouz, P.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    TEM of Dislocations in Forward-Biased 4H-SiC PiN Diodes

    New search for: Zhang, M.
    New search for: Lendenmann, H.
    New search for: Pirouz, P.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
    Title:

    TEM of Dislocations in Forward-Biased 4H-SiC PiN Diodes

    Contributors:

    Zhang, M. (author) / Lendenmann, H. (author) / Pirouz, P. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 457/460 ; 359-362

    Publication date:

    2004-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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