Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors: Fid-Bau Portal

Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors

Meyer, D. J. / Dautrich, M. S. / Lenahan, P. M. / Lelis, A.

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Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors

Meyer, D. J. / Dautrich, M. S. / Lenahan, P. M. / Lelis, A.

Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors

Meyer, D. J. / Dautrich, M. S. / Lenahan, P. M. / Lelis, A.

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Check availability in my library

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Document information

Title:

Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors

Contributors:

Meyer, D. J. (author) / Dautrich, M. S. (author) / Lenahan, P. M. (author) / Lelis, A. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.

Published in:

Silicon Carbide and Related Materials 2004 ; 593-598

MATERIALS SCIENCE FORUM ; 483/485

Publication date:

2005-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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