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Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors
Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors
Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors
Meyer, D. J. (author) / Dautrich, M. S. (author) / Lenahan, P. M. (author) / Lelis, A. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.
2005-01-01
6 pages
Article (Journal)
English
DDC:
620.11
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