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    In Situ Nitrogen and Aluminum Doping in Migration Enhanced Embedded Epitaxial Growth of 4H-SiC

    New search for: Schoner, A.
    New search for: Sugiyama, N.
    New search for: Takeuchi, Y.
    New search for: Malhan, R.K.

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    In Situ Nitrogen and Aluminum Doping in Migration Enhanced Embedded Epitaxial Growth of 4H-SiC

    New search for: Schoner, A.
    New search for: Sugiyama, N.
    New search for: Takeuchi, Y.
    New search for: Malhan, R.K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    In Situ Nitrogen and Aluminum Doping in Migration Enhanced Embedded Epitaxial Growth of 4H-SiC

    New search for: Schoner, A.
    New search for: Sugiyama, N.
    New search for: Takeuchi, Y.
    New search for: Malhan, R.K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

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    Document information
    Title:

    In Situ Nitrogen and Aluminum Doping in Migration Enhanced Embedded Epitaxial Growth of 4H-SiC

    Contributors:

    Schoner, A. (author) / Sugiyama, N. (author) / Takeuchi, Y. (author) / Malhan, R.K. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 600/603 ; 175-178

    Publication date:

    2009-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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