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Quantification of nitrogen profiles in HfSiON films for gate dielectrics
Quantification of nitrogen profiles in HfSiON films for gate dielectrics
Quantification of nitrogen profiles in HfSiON films for gate dielectrics
Yamamoto, T. (author) / Miyamoto, T. (author) / Karen, A. (author)
APPLIED SURFACE SCIENCE ; 231/232 ; 561-564
2004-01-01
4 pages
Article (Journal)
English
DDC:
621.35
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