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    Quantification of nitrogen profiles in HfSiON films for gate dielectrics

    New search for: Yamamoto, T.
    New search for: Miyamoto, T.
    New search for: Karen, A.

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    Quantification of nitrogen profiles in HfSiON films for gate dielectrics

    New search for: Yamamoto, T.
    New search for: Miyamoto, T.
    New search for: Karen, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Quantification of nitrogen profiles in HfSiON films for gate dielectrics

    New search for: Yamamoto, T.
    New search for: Miyamoto, T.
    New search for: Karen, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Quantification of nitrogen profiles in HfSiON films for gate dielectrics

    Contributors:

    Yamamoto, T. (author) / Miyamoto, T. (author) / Karen, A. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 231/232 ; 561-564

    Publication date:

    2004-01-01

    Size:

    4 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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