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    Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperature by photoelectron spectroscopy

    New search for: Yang, X. M.
    New search for: Yu, T.
    New search for: Wu, X. M.
    New search for: zhuge, L. J.
    New search for: Ge, S. B.
    New search for: He, J. J.

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    Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperature by photoelectron spectroscopy

    New search for: Yang, X. M.
    New search for: Yu, T.
    New search for: Wu, X. M.
    New search for: zhuge, L. J.
    New search for: Ge, S. B.
    New search for: He, J. J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperature by photoelectron spectroscopy

    New search for: Yang, X. M.
    New search for: Yu, T.
    New search for: Wu, X. M.
    New search for: zhuge, L. J.
    New search for: Ge, S. B.
    New search for: He, J. J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperature by photoelectron spectroscopy

    Contributors:

    Yang, X. M. (author) / Yu, T. (author) / Wu, X. M. (author) / zhuge, L. J. (author) / Ge, S. B. (author) / He, J. J. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 257 ; 9277-9281

    Publication date:

    2011-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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