Atomistic modeling of dopant implantation and annealing in Si: damage evolution, dopant diffusion and activation: Fid-Bau Portal

Atomistic modeling of dopant implantation and annealing in Si: damage evolution, dopant diffusion and activation

Pelaz, L. / Marqués, L. A. / Aboy, M. / López, P. / Barbolla, J.

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Atomistic modeling of dopant implantation and annealing in Si: damage evolution, dopant diffusion and activation

Pelaz, L. / Marqués, L. A. / Aboy, M. / López, P. / Barbolla, J.

Atomistic modeling of dopant implantation and annealing in Si: damage evolution, dopant diffusion and activation

Pelaz, L. / Marqués, L. A. / Aboy, M. / López, P. / Barbolla, J.

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Check availability in my library

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Document information

Title:

Atomistic modeling of dopant implantation and annealing in Si: damage evolution, dopant diffusion and activation

Contributors:

Pelaz, L. (author) / Marqués, L. A. (author) / Aboy, M. (author) / López, P. (author) / Barbolla, J. (author)

Published in:

COMPUTATIONAL MATERIALS SCIENCE ; 33 ; 92-105

Publication date:

2005-01-01

Size:

14 pages

ISSN:

0927-0256

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1 / 510

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