Epitaxial growth of uniform NiSi2 layers with atomically flat silicide/Si interface by solid-phase reaction in Ni-P/Si(100) systems: Fid-Bau Portal

Epitaxial growth of uniform NiSi2 layers with atomically flat silicide/Si interface by solid-phase reaction in Ni-P/Si(100) systems

Hsu, H. F. / Chan, H. Y. / Chen, T. H. / Wu, H. Y. / Cheng, S. L. / Wu, F. B.

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Epitaxial growth of uniform NiSi2 layers with atomically flat silicide/Si interface by solid-phase reaction in Ni-P/Si(100) systems

Hsu, H. F. / Chan, H. Y. / Chen, T. H. / Wu, H. Y. / Cheng, S. L. / Wu, F. B.

Epitaxial growth of uniform NiSi2 layers with atomically flat silicide/Si interface by solid-phase reaction in Ni-P/Si(100) systems

Hsu, H. F. / Chan, H. Y. / Chen, T. H. / Wu, H. Y. / Cheng, S. L. / Wu, F. B.

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Title:

Epitaxial growth of uniform NiSi2 layers with atomically flat silicide/Si interface by solid-phase reaction in Ni-P/Si(100) systems

Contributors:

Hsu, H. F. (author) / Chan, H. Y. (author) / Chen, T. H. (author) / Wu, H. Y. (author) / Cheng, S. L. (author) / Wu, F. B. (author)

Published in:

APPLIED SURFACE SCIENCE ; 257 ; 7422-7426

Publication date:

2011-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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Von Kaenel, H. / Mueller, E. / Goncalves-Conto, S. et al. | British Library Online Contents | 1996