Interfacial reactions of ultrahigh-vacuum-deposited Cu thin films on Si, Ge and on epitaxial Si-Ge layers on Si and Ge: Fid-Bau Portal

Interfacial reactions of ultrahigh-vacuum-deposited Cu thin films on Si, Ge and on epitaxial Si-Ge layers on Si and Ge

Chen, L. J. / Liu, C. S. / Lai, J. B.

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Interfacial reactions of ultrahigh-vacuum-deposited Cu thin films on Si, Ge and on epitaxial Si-Ge layers on Si and Ge

Chen, L. J. / Liu, C. S. / Lai, J. B.

Interfacial reactions of ultrahigh-vacuum-deposited Cu thin films on Si, Ge and on epitaxial Si-Ge layers on Si and Ge

Chen, L. J. / Liu, C. S. / Lai, J. B.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Interfacial reactions of ultrahigh-vacuum-deposited Cu thin films on Si, Ge and on epitaxial Si-Ge layers on Si and Ge

Contributors:

Chen, L. J. (author) / Liu, C. S. (author) / Lai, J. B. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 7 ; 143-156

Publication date:

2004-01-01

Size:

14 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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