Strain Relaxation and Induced Defects in SiGe Thin Films Grown on Ion-Implanted Si Substrates: Fid-Bau Portal

Strain Relaxation and Induced Defects in SiGe Thin Films Grown on Ion-Implanted Si Substrates

Yamanaka, J. / Sawano, K. / Nakagawa, K. / Suzuki, K. / Ozawa, Y. / Koh, S. / Hattori, T. / Shiraki, Y.

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Strain Relaxation and Induced Defects in SiGe Thin Films Grown on Ion-Implanted Si Substrates

Yamanaka, J. / Sawano, K. / Nakagawa, K. / Suzuki, K. / Ozawa, Y. / Koh, S. / Hattori, T. / Shiraki, Y.

Strain Relaxation and Induced Defects in SiGe Thin Films Grown on Ion-Implanted Si Substrates

Yamanaka, J. / Sawano, K. / Nakagawa, K. / Suzuki, K. / Ozawa, Y. / Koh, S. / Hattori, T. / Shiraki, Y.

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Document information

Title:

Strain Relaxation and Induced Defects in SiGe Thin Films Grown on Ion-Implanted Si Substrates

Contributors:

Yamanaka, J. (author) / Sawano, K. (author) / Nakagawa, K. (author) / Suzuki, K. (author) / Ozawa, Y. (author) / Koh, S. (author) / Hattori, T. (author) / Shiraki, Y. (author)

Published in:

MATERIALS TRANSACTIONS ; 45 ; 2644-2646

Publication date:

2004-01-01

Size:

3 pages

ISSN:

1345-9678

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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