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Structures prepared by implantation of silicon with nitrogen and annealing under high hydrostatic pressure

Rzodkiewicz, W. / Kudla, A. / Misiuk, A. / Surma, B. / Bak-Misiuk, J. / Hartwig, J. / Ratajczak, J.

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Structures prepared by implantation of silicon with nitrogen and annealing under high hydrostatic pressure

Rzodkiewicz, W. / Kudla, A. / Misiuk, A. / Surma, B. / Bak-Misiuk, J. / Hartwig, J. / Ratajczak, J.

Structures prepared by implantation of silicon with nitrogen and annealing under high hydrostatic pressure

Rzodkiewicz, W. / Kudla, A. / Misiuk, A. / Surma, B. / Bak-Misiuk, J. / Hartwig, J. / Ratajczak, J.

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Document information

Title:

Structures prepared by implantation of silicon with nitrogen and annealing under high hydrostatic pressure

Contributors:

Rzodkiewicz, W. (author) / Kudla, A. (author) / Misiuk, A. (author) / Surma, B. (author) / Bak-Misiuk, J. (author) / Hartwig, J. (author) / Ratajczak, J. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 7 ; 399-403

Publication date:

2004-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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