A platform for research: civil engineering, architecture and urbanism
SiGe-on-insulator material fabrication by oxygen implantation into SiGe/Si heterostructure and novel two-step annealing
SiGe-on-insulator material fabrication by oxygen implantation into SiGe/Si heterostructure and novel two-step annealing
SiGe-on-insulator material fabrication by oxygen implantation into SiGe/Si heterostructure and novel two-step annealing
Zhang, M. (author) / An, Z. (author) / Lin, C. (author) / Chu, P. K. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 114/115 ; 255-259
2004-01-01
5 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
High-performance SiGe heterostructure FET grown on silicon-on-insulator
British Library Online Contents | 2005
|Strain relaxation in nano-patterned strained-Si/SiGe heterostructure on insulator
British Library Online Contents | 2010
|British Library Online Contents | 2007
|Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate
British Library Online Contents | 2004
|Relaxed SiGe-on-insulator fabricated by dry oxidation of sandwiched Si/SiGe/Si structure
British Library Online Contents | 2005
|