Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate: Fid-Bau Portal

Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate

Kutsukake, K. / Usami, N. / Fujiwara, K. / Ujihara, T. / Sazaki, G. / Nakajima, K. / Zhang, B. / Segawa, Y.

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Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate

Kutsukake, K. / Usami, N. / Fujiwara, K. / Ujihara, T. / Sazaki, G. / Nakajima, K. / Zhang, B. / Segawa, Y.

Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate

Kutsukake, K. / Usami, N. / Fujiwara, K. / Ujihara, T. / Sazaki, G. / Nakajima, K. / Zhang, B. / Segawa, Y.

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Title:

Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate

Contributors:

Kutsukake, K. (author) / Usami, N. (author) / Fujiwara, K. (author) / Ujihara, T. (author) / Sazaki, G. (author) / Nakajima, K. (author) / Zhang, B. (author) / Segawa, Y. (author)

Published in:

APPLIED SURFACE SCIENCE ; 224 ; 95-98

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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