Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Relaxed SiGe-on-insulator with high Ge fraction obtained by oxidation of SiGe/Si-on-insulator with hydrogen ions implantation

    New search for: Cheng, X.
    New search for: Liu, H.
    New search for: Zhang, F.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Relaxed SiGe-on-insulator with high Ge fraction obtained by oxidation of SiGe/Si-on-insulator with hydrogen ions implantation

    New search for: Cheng, X.
    New search for: Liu, H.
    New search for: Zhang, F.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Relaxed SiGe-on-insulator with high Ge fraction obtained by oxidation of SiGe/Si-on-insulator with hydrogen ions implantation

    New search for: Cheng, X.
    New search for: Liu, H.
    New search for: Zhang, F.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Relaxed SiGe-on-insulator with high Ge fraction obtained by oxidation of SiGe/Si-on-insulator with hydrogen ions implantation

    Contributors:

    Cheng, X. (author) / Liu, H. (author) / Zhang, F. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 253 ; 4472-4476

    Publication date:

    2007-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Relaxed SiGe-on-insulator fabricated by dry oxidation of sandwiched Si/SiGe/Si structure

    Di, Z. / Zhang, M. / Liu, W. et al. | British Library Online Contents | 2005

    SiGe-on-insulator material fabrication by oxygen implantation into SiGe/Si heterostructure and novel two-step annealing

    Zhang, M. / An, Z. / Lin, C. et al. | British Library Online Contents | 2004

    High-performance SiGe heterostructure FET grown on silicon-on-insulator

    Wei Chien, P. / Lein Wu, S. / Jinn Chang, S. et al. | British Library Online Contents | 2005

    Wafer bonding involving strain-relaxed SiGe

    Radu, I. / Singh, R. / Reiche, M. et al. | British Library Online Contents | 2005

    Strain evolution of SiGe-on-insulator fabricated by germanium condensation method with over-oxidation

    Lin, Guangyang / Lan, Xiaoling / Chen, Ningli et al. | British Library Online Contents | 2016

    Back to top