A platform for research: civil engineering, architecture and urbanism
Improvement in epitaxial quality of selectively grown Si1-xGex layers with low pattern sensitivity for CMOS applications
Improvement in epitaxial quality of selectively grown Si1-xGex layers with low pattern sensitivity for CMOS applications
Improvement in epitaxial quality of selectively grown Si1-xGex layers with low pattern sensitivity for CMOS applications
Radamson, H. H. (author) / Hallstedt, J. (author) / Suvar, E. (author) / Menon, C. (author) / Ostling, M. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 25-30
2005-01-01
6 pages
Article (Journal)
English
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Investigations of selectively grown GaN/InGaN epitaxial layers
British Library Online Contents | 1997
|pMOSFETs with recessed and selectively regrown Si1-xGex source/drain junctions
British Library Online Contents | 2005
|Epitaxial ErSi2-x on strained and relaxed Si1-xGex
British Library Online Contents | 2002
|Step-bunching and strain-effects in Si1-xGex layers and Superlattices grown on vicinal Si(001)
British Library Online Contents | 2002
|Technological aspects of epitaxial CoSi~2 layers for CMOS
British Library Online Contents | 1993
|