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    Sidewall protection by nitrogen and oxygen in poly-Si1-xGex anisotropic etching using Cl2/N2/O2 plasma

    New search for: Cho, H. S.
    New search for: Takehiro, S.
    New search for: Sakuraba, M.
    New search for: Murota, J.

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    Sidewall protection by nitrogen and oxygen in poly-Si1-xGex anisotropic etching using Cl2/N2/O2 plasma

    New search for: Cho, H. S.
    New search for: Takehiro, S.
    New search for: Sakuraba, M.
    New search for: Murota, J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Sidewall protection by nitrogen and oxygen in poly-Si1-xGex anisotropic etching using Cl2/N2/O2 plasma

    New search for: Cho, H. S.
    New search for: Takehiro, S.
    New search for: Sakuraba, M.
    New search for: Murota, J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

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    Document information
    Title:

    Sidewall protection by nitrogen and oxygen in poly-Si1-xGex anisotropic etching using Cl2/N2/O2 plasma

    Contributors:

    Cho, H. S. (author) / Takehiro, S. (author) / Sakuraba, M. (author) / Murota, J. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 239-243

    Publication date:

    2005-01-01

    Size:

    5 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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