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Sidewall protection by nitrogen and oxygen in poly-Si1-xGex anisotropic etching using Cl2/N2/O2 plasma
Sidewall protection by nitrogen and oxygen in poly-Si1-xGex anisotropic etching using Cl2/N2/O2 plasma
Sidewall protection by nitrogen and oxygen in poly-Si1-xGex anisotropic etching using Cl2/N2/O2 plasma
Cho, H. S. (Autor:in) / Takehiro, S. (Autor:in) / Sakuraba, M. (Autor:in) / Murota, J. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 239-243
01.01.2005
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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