Simultaneous optical measurement of Ge content and Boron doping in strained epitaxial films using a novel data-analysis technique: Fid-Bau Portal

Simultaneous optical measurement of Ge content and Boron doping in strained epitaxial films using a novel data-analysis technique

Morris, S. / Fougeres, P. / Bozzo-Escoubas, S. / Bodnar, S. / Gaillard, S.

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Simultaneous optical measurement of Ge content and Boron doping in strained epitaxial films using a novel data-analysis technique

Morris, S. / Fougeres, P. / Bozzo-Escoubas, S. / Bodnar, S. / Gaillard, S.

Simultaneous optical measurement of Ge content and Boron doping in strained epitaxial films using a novel data-analysis technique

Morris, S. / Fougeres, P. / Bozzo-Escoubas, S. / Bodnar, S. / Gaillard, S.

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Check availability in my library

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Document information

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Document information

Title:

Simultaneous optical measurement of Ge content and Boron doping in strained epitaxial films using a novel data-analysis technique

Contributors:

Morris, S. (author) / Fougeres, P. (author) / Bozzo-Escoubas, S. (author) / Bodnar, S. (author) / Gaillard, S. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 261-266

Publication date:

2005-01-01

Size:

6 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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