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Simultaneous optical measurement of Ge content and Boron doping in strained epitaxial films using a novel data-analysis technique
Simultaneous optical measurement of Ge content and Boron doping in strained epitaxial films using a novel data-analysis technique
Simultaneous optical measurement of Ge content and Boron doping in strained epitaxial films using a novel data-analysis technique
Morris, S. (author) / Fougeres, P. (author) / Bozzo-Escoubas, S. (author) / Bodnar, S. (author) / Gaillard, S. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 261-266
2005-01-01
6 pages
Article (Journal)
English
DDC:
621.38152
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