Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Simultaneous optical measurement of Ge content and Boron doping in strained epitaxial films using a novel data-analysis technique
Simultaneous optical measurement of Ge content and Boron doping in strained epitaxial films using a novel data-analysis technique
Simultaneous optical measurement of Ge content and Boron doping in strained epitaxial films using a novel data-analysis technique
Morris, S. (Autor:in) / Fougeres, P. (Autor:in) / Bozzo-Escoubas, S. (Autor:in) / Bodnar, S. (Autor:in) / Gaillard, S. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 261-266
01.01.2005
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2004
|Simultaneous optical measurement of Ge-content and carbon doping in strained epitaxial SiGe films
British Library Online Contents | 2006
|High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM
British Library Online Contents | 2018
|Critical Thickness of Epitaxial Grown Semiconductor Films with Strained Structure
British Library Online Contents | 2008
|Defects in Strained Epitaxial SrRuO~3 Films on SrTiO~3 Substrates
British Library Online Contents | 2007
|