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Simultaneous optical measurement of Germanium content and Boron doping in strained heteroepitaxial SiGe films using a novel data-analysis technique
Simultaneous optical measurement of Germanium content and Boron doping in strained heteroepitaxial SiGe films using a novel data-analysis technique
Simultaneous optical measurement of Germanium content and Boron doping in strained heteroepitaxial SiGe films using a novel data-analysis technique
Morris, S. J. (author) / Fougeres, P. (author) / Bozzo-Escoubas, S. (author) / Bodnar, S. (author) / Gaillard, S. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 7 ; 383-387
2004-01-01
5 pages
Article (Journal)
English
DDC:
621.38152
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