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Simultaneous optical measurement of Ge-content and carbon doping in strained epitaxial SiGe films

Morris, S. / Le Cunff, D. / Ristoiu, D. / Vachellerie, V. / Deleglise, F. / Dutartre, D.

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Simultaneous optical measurement of Ge-content and carbon doping in strained epitaxial SiGe films

Morris, S. / Le Cunff, D. / Ristoiu, D. / Vachellerie, V. / Deleglise, F. / Dutartre, D.

Simultaneous optical measurement of Ge-content and carbon doping in strained epitaxial SiGe films

Morris, S. / Le Cunff, D. / Ristoiu, D. / Vachellerie, V. / Deleglise, F. / Dutartre, D.

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Title:

Simultaneous optical measurement of Ge-content and carbon doping in strained epitaxial SiGe films

Contributors:

Morris, S. (author) / Le Cunff, D. (author) / Ristoiu, D. (author) / Vachellerie, V. (author) / Deleglise, F. (author) / Dutartre, D. (author)

Published in:

APPLIED SURFACE SCIENCE ; 253 ; 167-172

Publication date:

2006-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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Selective epitaxial growth of SiGe for strained Si transistors

Ning, X. J. / Gao, D. / Bonfanti, P. et al. | British Library Online Contents | 2006

Selective epitaxial growth of strained SiGe/Si for optoelectronic devices

Vescan, L. / Stoica, T. / Goryll, M. et al. | British Library Online Contents | 1998

Optical anisotropies in strained Si/SiGe systems

Olajos, J. / Engvall, J. / Grimmeiss, H. G. et al. | British Library Online Contents | 1996