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SiGe/Si PMOSFET using graded channel technique

Lin, Y. M. / Wu, S. L. / Chang, S. J. / Chen, P. S. / Liu, C. W.

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SiGe/Si PMOSFET using graded channel technique

Lin, Y. M. / Wu, S. L. / Chang, S. J. / Chen, P. S. / Liu, C. W.

SiGe/Si PMOSFET using graded channel technique

Lin, Y. M. / Wu, S. L. / Chang, S. J. / Chen, P. S. / Liu, C. W.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

SiGe/Si PMOSFET using graded channel technique

Contributors:

Lin, Y. M. (author) / Wu, S. L. (author) / Chang, S. J. (author) / Chen, P. S. (author) / Liu, C. W. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 347-351

Publication date:

2005-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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