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    Comprehensive effects of strained Ge1−xSnx and device layout arrangement on a nano-scale Ge-based PMOSFET with a short channel

    New search for: Lee, Chang-Chun
    New search for: Huang, Pei-Chen

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    Comprehensive effects of strained Ge1−xSnx and device layout arrangement on a nano-scale Ge-based PMOSFET with a short channel

    New search for: Lee, Chang-Chun
    New search for: Huang, Pei-Chen

    Access

    Access via TIB
    Check availability in my library
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    Comprehensive effects of strained Ge1−xSnx and device layout arrangement on a nano-scale Ge-based PMOSFET with a short channel

    New search for: Lee, Chang-Chun
    New search for: Huang, Pei-Chen

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    Comprehensive effects of strained Ge1−xSnx and device layout arrangement on a nano-scale Ge-based PMOSFET with a short channel

    Contributors:

    Lee, Chang-Chun (author) / Huang, Pei-Chen (author)

    Published in:

    Materials science in semiconductor processing ; 70 ; 145-150

    Publication date:

    2017-01-01

    Size:

    6 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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