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    Photo-electron emission and atomic force microscopies of the hydrogen etched 6H-SiC(0001) surface and the initial growth of GaN and AlN

    New search for: Hartman, J. D.
    New search for: Naniwae, K.
    New search for: Petrich, C.
    New search for: Nemanich, R. J.
    New search for: Davis, R. F.

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    Photo-electron emission and atomic force microscopies of the hydrogen etched 6H-SiC(0001) surface and the initial growth of GaN and AlN

    New search for: Hartman, J. D.
    New search for: Naniwae, K.
    New search for: Petrich, C.
    New search for: Nemanich, R. J.
    New search for: Davis, R. F.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Photo-electron emission and atomic force microscopies of the hydrogen etched 6H-SiC(0001) surface and the initial growth of GaN and AlN

    New search for: Hartman, J. D.
    New search for: Naniwae, K.
    New search for: Petrich, C.
    New search for: Nemanich, R. J.
    New search for: Davis, R. F.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Photo-electron emission and atomic force microscopies of the hydrogen etched 6H-SiC(0001) surface and the initial growth of GaN and AlN

    Contributors:

    Hartman, J. D. (author) / Naniwae, K. (author) / Petrich, C. (author) / Nemanich, R. J. (author) / Davis, R. F. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 242 ; 428-436

    Publication date:

    2005-01-01

    Size:

    9 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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