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Epitaxial Growth and Characterization of Phosphorus Doped SiC Using TBP as Precursor

Henry, A. / Janzen, E.

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Epitaxial Growth and Characterization of Phosphorus Doped SiC Using TBP as Precursor

Henry, A. / Janzen, E.

Epitaxial Growth and Characterization of Phosphorus Doped SiC Using TBP as Precursor

Henry, A. / Janzen, E.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Epitaxial Growth and Characterization of Phosphorus Doped SiC Using TBP as Precursor

Contributors:

Henry, A. (author) / Janzen, E. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.

Published in:

Silicon Carbide and Related Materials 2004 ; 101-104

MATERIALS SCIENCE FORUM ; 483/485

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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