Chemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the Precursors

Wang, R. / Bhat, I. B. / Chow, T. P. | British Library Online Contents | 2003

SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor

Leone, S. / Mauceri, M. / Pistone, G. et al. | British Library Online Contents | 2006

Epitaxial Growth and Characterization of Phosphorus Doped SiC Using TBP as Precursor

Henry, A. / Janzen, E. | British Library Online Contents | 2005

Phosphorus diffusion into silicon after vapor phase surface adsorption of phosphine

Kalkofen, B. / Lisker, M. / Burte, E. P. | British Library Online Contents | 2005

Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy

Hiramatsu, K. / Matsushima, H. / Shibata, T. et al. | British Library Online Contents | 1999