Characteristics of Post-Nitridation Rapid-Thermal Annealed Gate Oxide Grown on 4H-SiC: Fid-Bau Portal

Characteristics of Post-Nitridation Rapid-Thermal Annealed Gate Oxide Grown on 4H-SiC

Cheong, K. Y. / Bahng, W. / Kim, N. K.

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Characteristics of Post-Nitridation Rapid-Thermal Annealed Gate Oxide Grown on 4H-SiC

Cheong, K. Y. / Bahng, W. / Kim, N. K.

Characteristics of Post-Nitridation Rapid-Thermal Annealed Gate Oxide Grown on 4H-SiC

Cheong, K. Y. / Bahng, W. / Kim, N. K.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Characteristics of Post-Nitridation Rapid-Thermal Annealed Gate Oxide Grown on 4H-SiC

Contributors:

Cheong, K. Y. (author) / Bahng, W. (author) / Kim, N. K. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.

Published in:

Silicon Carbide and Related Materials 2004 ; 689-692

MATERIALS SCIENCE FORUM ; 483/485

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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